Paper
14 January 1993 Hot-carrier effects in thin-film, p-channel, hydrogen-passivated polysilicon-on-insulator LDD MOSFETs
Swapan Bhattacharya, R. Kovelamudi, S. Batra, M. Lobo, Sanjay K. Banerjee, Bich-Yen Nguyen, Phil J. Tobin
Author Affiliations +
Proceedings Volume 1802, Microelectronics Manufacturing and Reliability; (1993) https://doi.org/10.1117/12.139356
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States
Abstract
Hot-carrier stressing has been shown to degrade hydrogen-passivated p-channel polysilicon-on- oxide MOSFETs by two parallel degradation mechanisms. We observe hot-carrier-induced degradation of hydrogen passivation at grain boundaries through the creation of additional donor-type grain boundary states in the channel, as well as hot-electron trapping in the gate oxide. Due to the presence of both of these degradation mechanisms, p-channel polysilicon MOSFETs exhibit anomalous hot-carrier-induced degradation behavior that has not been observed in bulk p-MOSFETs.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Swapan Bhattacharya, R. Kovelamudi, S. Batra, M. Lobo, Sanjay K. Banerjee, Bich-Yen Nguyen, and Phil J. Tobin "Hot-carrier effects in thin-film, p-channel, hydrogen-passivated polysilicon-on-insulator LDD MOSFETs", Proc. SPIE 1802, Microelectronics Manufacturing and Reliability, (14 January 1993); https://doi.org/10.1117/12.139356
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KEYWORDS
Oxides

Electrons

Field effect transistors

Reliability

Microelectronics

Manufacturing

Argon

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