In-situ temperature control for RTP via thermal expansion measurement

Bruce W. Peuse; Allan Rosekrans; Kenneth Snow

doi:10.1117/12.142092

16 March 1993 In-situ temperature control for RTP via thermal expansion measurement

Bruce W. Peuse, Allan Rosekrans, Kenneth Snow

Proceedings Volume 1804, Rapid Thermal and Laser Processing; (1993) https://doi.org/10.1117/12.142092
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

A new method of temperature control for rapid thermal processing of silicon wafers is presented whereby in-situ wafer temperature is determined by measurement of wafer thermal expansion via a laser autofocus mechanism. Various potential error sources are considered including wafer bow, effects of wafer doping and crystal orientation. Results are provided showing that variations in crystalline orientation and dopant levels have no measurable effect on expansion of the silicon substrate, allowing a direct correlation of wafer expansion to temperature. The expansion measurement technique and implementation into a rapid thermal processing system as a temperature control is described. Preliminary data show the wafer to wafer repeatability of temperature is 1% (3-(sigma) ) using wafer expansion as the control.

Citation Download Citation

Bruce W. Peuse, Allan Rosekrans, and Kenneth Snow "In-situ temperature control for RTP via thermal expansion measurement", Proc. SPIE 1804, Rapid Thermal and Laser Processing, (16 March 1993); https://doi.org/10.1117/12.142092

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