Strain related to oxygen agglomerates in processed Czochralski-grown silicon

Andrzej Misiuk

doi:10.1117/12.156993

15 October 1993 Strain related to oxygen agglomerates in processed Czochralski-grown silicon

Andrzej Misiuk

Proceedings Volume 1845, Liquid and Solid State Crystals: Physics, Technology and Applications; (1993) https://doi.org/10.1117/12.156993
Event: Liquid and Solid State Crystals: Physics, Technology, and Applications, 1992, Zakopane, Poland

Abstract

Oxygen atoms contained in Czochralski-grown silicon single crystal (Cz-Si) precipitate at higher temperatures and produce strain at the oxygen agglomerate/Si matrix boundary. The strain is manifested by the changes of lattice constant and x-ray anomalous transmission values and ought to be taken into account for Si used as the reference standard. Hydrostatic pressure treatment applied to the Cz-Si single crystals makes it possible to obtain better understanding of the strain related to oxygen agglomeration.

Citation Download Citation

Andrzej Misiuk "Strain related to oxygen agglomerates in processed Czochralski-grown silicon", Proc. SPIE 1845, Liquid and Solid State Crystals: Physics, Technology and Applications, (15 October 1993); https://doi.org/10.1117/12.156993

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