All-MOCVD-grown BH laser on P-InP substrates

Tadashi Nishimura; E. Ishimura; Yasuo Nakajima; Hitoshi Tada; T. Kimura; Y. Ohkura; Katsuhiko Goto; Etsuji Omura; Masao Aiga

doi:10.1117/12.147101

1 July 1993 All-MOCVD-grown BH laser on P-InP substrates

Tadashi Nishimura, E. Ishimura, Yasuo Nakajima, Hitoshi Tada, T. Kimura, Y. Ohkura, Katsuhiko Goto, Etsuji Omura, Masao Aiga

Author Affiliations +

Proceedings Volume 1849, Optoelectronic Interconnects; (1993) https://doi.org/10.1117/12.147101
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

A very low cw threshold current of 2.5 mA ( 25 degree(s)C) and 8.0 mA ( 80 degree(s)C) with high reliability has been realized in the all-MOCVD grown BH lasers on p-InP substrates. A strained MQW active layer of 1.3 micrometers wavelength and the precise carrier confinement buried structure by MOCVD is employed for the BH lasers. The excellent potential of long lifetime of the all-MOCVD grown laser has also been confirmed. After the high temperature and the high current (100 degree(s)C, 200 mA) aging test, no significant degradation is observed which is comparable with the well-established LPE grown lasers. The BH laser is also operating stably over 3700 hrs under the APC condition of 50 degree(s)C, 10 mW. Finally, an extremely uniform 10-element all-MOCVD grown LD array is demonstrated, which has the threshold current uniformity of 2.4 +/- 0.1 mA ( 25 degree(s)C) and 9.2 +/- 0.2 mA ( 80 degree(s)C). The growth mechanism in the MOCVD is also described.

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Tadashi Nishimura, E. Ishimura, Yasuo Nakajima, Hitoshi Tada, T. Kimura, Y. Ohkura, Katsuhiko Goto, Etsuji Omura, and Masao Aiga "All-MOCVD-grown BH laser on P-InP substrates", Proc. SPIE 1849, Optoelectronic Interconnects, (1 July 1993); https://doi.org/10.1117/12.147101

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