Paper
16 June 1993 Bandwidth reduction due to confinement factor modulation in quantum-well lasers
Seoyong Shin, Chin B. Su
Author Affiliations +
Proceedings Volume 1850, Laser Diode Technology and Applications V; (1993) https://doi.org/10.1117/12.146923
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States
Abstract
A new mechanism is described that is based on the modulation of the confinement factor with carrier density in quantum-well lasers. This new mechanism may limit modulation bandwidth for quantum-well laser with high threshold carrier density and narrow confining layer.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seoyong Shin and Chin B. Su "Bandwidth reduction due to confinement factor modulation in quantum-well lasers", Proc. SPIE 1850, Laser Diode Technology and Applications V, (16 June 1993); https://doi.org/10.1117/12.146923
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KEYWORDS
Modulation

Laser damage threshold

Semiconductor lasers

Solids

Technologies and applications

Electrical engineering

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