Investigation of evolution of microprofile on silicon surface under high-power laser-pulsed effect

Alexander F. Banishev; I. M. Chistyakov

doi:10.1117/12.147621

24 June 1993 Investigation of evolution of microprofile on silicon surface under high-power laser-pulsed effect

Alexander F. Banishev, I. M. Chistyakov

Proceedings Volume 1856, Laser Radiation Photophysics; (1993) https://doi.org/10.1117/12.147621
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

The results are presented of local interferometry investigation of the microrelief evolution of silicon surface under the high power laser pulsed effect (Ppulse approximately equals 1 J, (lambda) equals 1.06 micrometers , (tau) pulse approximately equals 1.5 msec). It has been shown that the formation of the periodic microrelief is preceded by the excitation and concurrence of surface deformations of various types.

Citation Download Citation

Alexander F. Banishev and I. M. Chistyakov "Investigation of evolution of microprofile on silicon surface under high-power laser-pulsed effect", Proc. SPIE 1856, Laser Radiation Photophysics, (24 June 1993); https://doi.org/10.1117/12.147621

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