Photoresist striation study on the 8-inch topography wafer

Daniel Hao-Tien Lee; Chih-Yung Lin; Gwo-Yuh Shiau

doi:10.1117/12.150472

8 August 1993 Photoresist striation study on the 8-inch topography wafer

Daniel Hao-Tien Lee, Chih-Yung Lin, Gwo-Yuh Shiau

Proceedings Volume 1927, Optical/Laser Microlithography; (1993) https://doi.org/10.1117/12.150472
Event: SPIE'S 1993 Symposium on Microlithography, 1993, San Jose, CA, United States

Abstract

The striation problem on 8' topographical wafers is reported. The striation on topographical wafers is not observed on planar wafers. The degree of striation increases with topographical step-height for the traditional photoresist dispense method. In this study, two modified photoresist dispense methods have been adopted for improving striation problems on topographical wafers. The design of experiment by Taguchi method has been used to determine the optimized conditions for the resist dispense methods. The results of signal-to- noise ratios analyses indicate the factors influencing the degree of striation are strongly dependent on the dispense method being used. It is noted that the traditional dispense method only shows a small degree of improvement in striation even by using Taguchi design-of- experiment (DOE). A large degree of improvement in striation can be achieved by using the modified dispense methods suggested in this study. In summary, this study shows the striation problem on 8' topographical wafers can be improved by using the modified dispense methods suggested in the study. The Taguchi design of experiment method is a valuable tool to determine the optimized process conditions.

Citation Download Citation

Daniel Hao-Tien Lee, Chih-Yung Lin, and Gwo-Yuh Shiau "Photoresist striation study on the 8-inch topography wafer", Proc. SPIE 1927, Optical/Laser Microlithography, (8 August 1993); https://doi.org/10.1117/12.150472

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