Dynamics Of Laser Annealing

D. H. Auston; J. A. Golovchenko; T. N. C. Venkatesan

doi:10.1117/12.958015

24 January 1980 Dynamics Of Laser Annealing

D. H. Auston, J. A. Golovchenko, T. N. C. Venkatesan

Proceedings Volume 0198, Laser Applications in Materials Processing; (1980) https://doi.org/10.1117/12.958015
Event: 23rd Annual Technical Symposium, 1979, San Diego, United States

Abstract

The physical mechanisms responsible for the annealing of ion implanted semiconductors for a wide range of materials and annealing conditions have been identified through the use of in-situ dynamical measurements of optical properties. These measurements combined with post-anneal sample characterization, i.e., channeling, electrical measurements, etc., lead to the identification of two different annealing mechanisms. For the case of Q-switched lasers a liquid phase epitaxial regrowth of the damaged layer is indicated. For c.w. lasers solid phase epitaxial regrowth can occur.

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D. H. Auston, J. A. Golovchenko, and T. N. C. Venkatesan "Dynamics Of Laser Annealing", Proc. SPIE 0198, Laser Applications in Materials Processing, (24 January 1980); https://doi.org/10.1117/12.958015

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