Heterojunction band discontinuities measured by free-electron laser internal photoemission

Carlo Coluzza; J. Almeida; E. Tuncel; Jean Louis Staehli; P. A. Baudat; Giorgio Margaritondo; Jim T. McKinley; Akira Ueda; Alan V. Barnes; Royal G. Albridge; Norman H. Tolk; D. Martin; Francois Morier-Genoud; C. Dupuy; Alok P. Rudra; Marc Ilegems

doi:10.1117/12.162743

19 November 1993 Heterojunction band discontinuities measured by free-electron laser internal photoemission

Carlo Coluzza, J. Almeida, E. Tuncel, Jean Louis Staehli, P. A. Baudat, Giorgio Margaritondo, Jim T. McKinley, Akira Ueda, Alan V. Barnes, Royal G. Albridge, Norman H. Tolk, D. Martin, Francois Morier-Genoud, C. Dupuy, Alok P. Rudra, Marc Ilegems

Author Affiliations +

Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162743
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy

Abstract

We used optical pumping by the Vanderbilt Free Electron Laser and the technique of internal photoemission to measure with high accuracy the conduction band discontinuity of semiconductor heterojunction interfaces. The experiment is the first application of a free- electron laser to interface research.

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Carlo Coluzza, J. Almeida, E. Tuncel, Jean Louis Staehli, P. A. Baudat, Giorgio Margaritondo, Jim T. McKinley, Akira Ueda, Alan V. Barnes, Royal G. Albridge, Norman H. Tolk, D. Martin, Francois Morier-Genoud, C. Dupuy, Alok P. Rudra, and Marc Ilegems "Heterojunction band discontinuities measured by free-electron laser internal photoemission", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162743

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