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19 November 1993 Many body theory of strained-quantum-well laser media
Mauro Fernandes Pereira Jr., Stephan W. Koch, Weng W. Chow
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Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162804
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
Optical and electronic properties of lattice matched and strained quantum well laser media are analyzed for high carrier densities, combining many-body and band structure engineering techniques. The compressive strain yields more efficient inversion with consequent lower threshold carrier densities. The combined influence of strain and Coulomb effects on the (alpha) -factor causes a complicated dependence of (alpha) on the quantum well structure, laser frequency, carrier density, and threshold gain as observed in experiments.
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Mauro Fernandes Pereira Jr., Stephan W. Koch, and Weng W. Chow "Many body theory of strained-quantum-well laser media", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162804
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KEYWORDS
Quantum wells
Laser damage threshold
Structural engineering
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