Paper
19 November 1993 Characterization of InP/GaInAs superlattices by spectroscopic ellipsometry
Marco Amiotti, Giorgio Guizzetti, Maddalena Patrini, Gunnar Landgren
Author Affiliations +
Proceedings Volume 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II; (1993) https://doi.org/10.1117/12.162777
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications II, 1993, Trieste, Italy
Abstract
A set of InP/GaInAs 30 periods superlattices with a wide range of barrier and well thicknesses were grown on (100) InP substrates by metal organic vapor phase epitaxy (MOVPE). Their optical response was measured at room temperature by spectroscopic ellipsometry from 1.8 to 5 eV. The nominal structures were checked by two methods of multi-layer modelling: full simulation using bulk dielectric functions for each layer and effective medium approximation, with the appropriate volume fractions. The thicknesses of well, barrier, and oxide overlayer were determined, and the effects of the interface region were discussed. The dielectric functions derived from the measured tg (psi) and cos(Delta) spectra were compared with the simulated ones obtained from the fitted structural model.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Marco Amiotti, Giorgio Guizzetti, Maddalena Patrini, and Gunnar Landgren "Characterization of InP/GaInAs superlattices by spectroscopic ellipsometry", Proc. SPIE 1985, Physical Concepts and Materials for Novel Optoelectronic Device Applications II, (19 November 1993); https://doi.org/10.1117/12.162777
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KEYWORDS
Spectroscopic ellipsometry

Superlattices

Dielectrics

Interfaces

Metals

Modeling

Optical testing

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