Hans Zogg,1 Alexander Fach,1 Clau Maissen,1 Jiri Masek,1 Stefan Blunier,1 K. Kessler,1 Peter Mueller,1 Carmine Paglino,1 Stefan I. Teodoropol,2 A. N. Tiwari1
1Swiss Federal Institute of Technology (Switzerland) 2Swiss Federal Institute of Technology (Canada)
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MBE growth and IR device fabrication with epitaxial IV-VI layers on Si-substrates is reviewed and some new results are included. Epitaxy is achieved using a stacked BaF2/CaF2 or CaF2 buffer layer. While photolithographic delineation techniques are somewhat difficult with BaF2 (which is soluble in water), reliable wet-etching techniques are easy with the CaF2 buffer. Photovoltaic IV-VI sensors on Si(111) substrates are fabricated with cut-off wavelengths covering the whole atmospheric 3 - 5 and 8 - 14 micrometers window. They offer the possibility for low cost IR focal plane arrays with sensitivities similar to MCT, but with much less demanding material processing steps.
Hans Zogg,Alexander Fach,Clau Maissen,Jiri Masek,Stefan Blunier,K. Kessler,Peter Mueller,Carmine Paglino,Stefan I. Teodoropol, andA. N. Tiwari
"Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications", Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); https://doi.org/10.1117/12.164936
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Hans Zogg, Alexander Fach, Clau Maissen, Jiri Masek, Stefan Blunier, K. Kessler, Peter Mueller, Carmine Paglino, Stefan I. Teodoropol, A. N. Tiwari, "Epitaxial lead-chalcogenides on fluoride/Si for IR-sensor array applications," Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); https://doi.org/10.1117/12.164936