Paper
15 September 1993 Temperature measurements on metallic lines under current stresses by laser probing and correlation with electromigration tests at wafer level
Wilfrid Claeys, Francois Giroux, S. Dilhaire, C. Gounelle, V. Quintard, P. Mortini
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Abstract
Wafer-level monitoring of electromigration is widely investigated. For this purpose, test structures with specific geometrical features have been proposed allowing very accelerated tests; they are called `SWEAT' structures. The aim of this contribution is to present a method for the study of the thermal behavior of such devices. Laser probing offers a contactless investigation method with excellent lateral resolution, compared with the classical IR thermography. This method allows us to determine the temperature profile along the SWEAT structure axis. Electromigration data (i.e., failure location) are presented and interpreted based on the knowledge of the temperature along the structure.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wilfrid Claeys, Francois Giroux, S. Dilhaire, C. Gounelle, V. Quintard, and P. Mortini "Temperature measurements on metallic lines under current stresses by laser probing and correlation with electromigration tests at wafer level", Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); https://doi.org/10.1117/12.156525
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Cited by 3 scholarly publications.
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KEYWORDS
Temperature metrology

Laser beam diagnostics

Wafer testing

Diffusion

Interferometers

Metals

Reflectivity

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