Temperature measurements on metallic lines under current stresses by laser probing and correlation with electromigration tests at wafer level

Wilfrid Claeys; Francois Giroux; S. Dilhaire; C. Gounelle; V. Quintard; P. Mortini

doi:10.1117/12.156525

15 September 1993 Temperature measurements on metallic lines under current stresses by laser probing and correlation with electromigration tests at wafer level

Wilfrid Claeys, Francois Giroux, S. Dilhaire, C. Gounelle, V. Quintard, P. Mortini

Author Affiliations +

Proceedings Volume 2090, Multilevel Interconnection: Issues That Impact Competitiveness; (1993) https://doi.org/10.1117/12.156525
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

Wafer-level monitoring of electromigration is widely investigated. For this purpose, test structures with specific geometrical features have been proposed allowing very accelerated tests; they are called `SWEAT' structures. The aim of this contribution is to present a method for the study of the thermal behavior of such devices. Laser probing offers a contactless investigation method with excellent lateral resolution, compared with the classical IR thermography. This method allows us to determine the temperature profile along the SWEAT structure axis. Electromigration data (i.e., failure location) are presented and interpreted based on the knowledge of the temperature along the structure.

Citation Download Citation

Wilfrid Claeys, Francois Giroux, S. Dilhaire, C. Gounelle, V. Quintard, and P. Mortini "Temperature measurements on metallic lines under current stresses by laser probing and correlation with electromigration tests at wafer level", Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); https://doi.org/10.1117/12.156525

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