Paper
31 October 1994 Express method for optical strength diagnostics in transparent dielectrics and semiconductors
Nadezhda E. Korsunskaya, Nicolai R. Kulish, Grigory S. Pekar, Aleksandr F. Singaevsky
Author Affiliations +
Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191984
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine
Abstract
The monopulse method for rapidly determining the threshold energy Eth and threshold power density Jth of optical destruction in optically transparent dielectrics and semiconductors is developed. This method of diagnostics is based on measuring the optical transmission and electrical conductivity of the specimen under irradiation by laser pulses. The advantages of such diagnostics over the previously developed multi-pulsed methods are analyzed. As an example, the use of the method proposed for CdS single crystals, among them the crystals with uniquely high optical strength (Jth equals 600 - 800 MW/cm2), is described.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nadezhda E. Korsunskaya, Nicolai R. Kulish, Grigory S. Pekar, and Aleksandr F. Singaevsky "Express method for optical strength diagnostics in transparent dielectrics and semiconductors", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); https://doi.org/10.1117/12.191984
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KEYWORDS
Crystals

Diagnostics

Transmittance

Dielectrics

Semiconductors

Transparent semiconductors

Cadmium sulfide

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