Paper
28 July 1994 Electrostatic reduction of particulates for laser resistant hafnia coatings
Mark G. Miller, Robert Chow, Gary E. Loomis
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Abstract
We have reduced by 50% particulate defect density of hafnia coatings deposited onto silicon substrates through the use of electric fields, physical barriers and deposition rates. In an effort to reduce the number of hafnia particulates deposited onto silicon wafers, parallel plate electrodes were placed on either side of the evaporant plume. The particulate level was determined as the deposition rate was varied from 0.75 angstroms/sec to 12 angstroms/sec. Then, parallel plate electrodes were placed on either side of the plume as a way of electrostatically deflecting hafnia particulates away from the substrates. Later a single plate electrode was used in conjunction with a physical barrier placed over the hearth. The results of our study indicate that minimal defects occur when a parallel plate electric field is applied in conjunction with a fast deposition rate. Using a screen as a physical barrier, and/or a single electrode had little or no effect. This data may be useful in the manufacture of multilayer optical coatings with high laser damage thresholds.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark G. Miller, Robert Chow, and Gary E. Loomis "Electrostatic reduction of particulates for laser resistant hafnia coatings", Proc. SPIE 2114, Laser-Induced Damage in Optical Materials: 1993, (28 July 1994); https://doi.org/10.1117/12.180894
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CITATIONS
Cited by 5 scholarly publications.
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KEYWORDS
Electrodes

Semiconducting wafers

Silicon

Optical coatings

Laser damage threshold

Tantalum

Electron beams

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