ZnSe/GaAs epitaxial film modification by soft x-ray irradiation

Valery Ju. Znamenskiy; O. B. Anan'in; R. Z. Bagateliya; Yuri A. Bykovsky; Yuri V. Eryomin; Alexander Vladimirov Kovalenko; I. K. Novikov; A. A. Zhuravlev

doi:10.1117/12.180836

21 July 1994 ZnSe/GaAs epitaxial film modification by soft x-ray irradiation

Valery Ju. Znamenskiy, O. B. Anan'in, R. Z. Bagateliya, Yuri A. Bykovsky, Yuri V. Eryomin, Alexander Vladimirov Kovalenko, I. K. Novikov, A. A. Zhuravlev

Author Affiliations +

Proceedings Volume 2125, Laser Techniques for Surface Science; (1994) https://doi.org/10.1117/12.180836
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

The possibility of ZnSe/GaAs epitaxial layer enhancing by means of soft X-ray irradiation is reported. High intensity soft X-rays in waverange 80-120 A are produced by laser plasma source with waveguide X-ray optics. The X-ray diffraction data and photoluminescence spectra excited by He-Cd laser (T=4.2 K) are represented.

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Valery Ju. Znamenskiy, O. B. Anan'in, R. Z. Bagateliya, Yuri A. Bykovsky, Yuri V. Eryomin, Alexander Vladimirov Kovalenko, I. K. Novikov, and A. A. Zhuravlev "ZnSe/GaAs epitaxial film modification by soft x-ray irradiation", Proc. SPIE 2125, Laser Techniques for Surface Science, (21 July 1994); https://doi.org/10.1117/12.180836

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