Immersed photodiodes for IR range from 8 to 14 um

Valery I. Turinov

doi:10.1117/12.166361

31 December 1993 Immersed photodiodes for IR range from 8 to 14 um

Valery I. Turinov

Proceedings Volume 2161, CIS Selected Papers: Photometry; (1993) https://doi.org/10.1117/12.166361
Event: Photometry: Selected Papers from the 8th and 9th CIS Conferences, 1992, Moscow, Russian Federation

Abstract

The immersion lens (IL) influence on detecting ability D(lambda) ^* of Cd_xHg_1-xTe photodiodes designed for the IR range from 8 to 14 micrometers is considered. Theoretical dependencies of D(lambda) ^* and the threshold temperature difference (Delta) T_t of the IR imaging system on the limit wavelength (lambda) _co immersion photodiodes (IPh) are given. Affecting both a signal and noise of photodiodes the immersion increases their D(lambda) ^*. IR imaging systems with IPh become not so critical to the choice of (lambda) .

Citation Download Citation

Valery I. Turinov "Immersed photodiodes for IR range from 8 to 14 um", Proc. SPIE 2161, CIS Selected Papers: Photometry, (31 December 1993); https://doi.org/10.1117/12.166361

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