Deep-UV resists based on methacrylamide copolymers

Carlo Mertesdorf; Bertholt Nathal; Norbert Muenzel; Heinz E. Holzwarth; Hans-Thomas Schacht

doi:10.1117/12.175342

16 May 1994 Deep-UV resists based on methacrylamide copolymers

Carlo Mertesdorf, Bertholt Nathal, Norbert Muenzel, Heinz E. Holzwarth, Hans-Thomas Schacht

Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175342
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

The present paper describes chemically amplified positive tone Deep-UV resists based on N-hydroxybenzyl methacrylamide (HBMAA) copolymers. HBMAA's were found to be attractive comonomers, due to their facile synthesis and their beneficial impact on the physical properties of the copolymers and the photoresists prepared from them. For example, good adhesion was provided to the silicon substrate and high glass transition temperatures were achieved which confer an appreciable thermal flow stability to the resist. HBMAA/4-tetrahydropyranyl vinyl phenol/methacrylic acid terpolymers were synthesized by radical polymerization which proceeds in a statistical manner. This allows for the monomers to be combined in the appropriate ratios, thus, tailoring the polymer properties, such as the glass transition and the dissolution rate. Two and three component resist formulations based on these terpolymrs exhibit linear resolution to 0.35 micrometers (NA 0.37). Thermal flow stability of the resists exceeded 130 degree(s)C. No auto decomposition was observed. Resists were applied without top coat and have a post exposure delay latitude of more than one hour.

Citation Download Citation

Carlo Mertesdorf, Bertholt Nathal, Norbert Muenzel, Heinz E. Holzwarth, and Hans-Thomas Schacht "Deep-UV resists based on methacrylamide copolymers", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175342

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