Ultrahigh resolution in-lens type wafer inspection system

Fumio Mizuno; Satoru Yamada; Akihiro Miura; Tadashi Ohtaka; Nobuo Tsumaki

doi:10.1117/12.174119

1 May 1994 Ultrahigh resolution in-lens type wafer inspection system

Fumio Mizuno, Satoru Yamada, Akihiro Miura, Tadashi Ohtaka, Nobuo Tsumaki

Proceedings Volume 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII; (1994) https://doi.org/10.1117/12.174119
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Wafer inspection systems using a scanning electron beam are utilized for the observation of patterns in microcircuits. The spatial resolution that is required for these systems has been decreasing every three years by a factor of 0.7 corresponding to the scaling of the critical feature sizes. A resolving power above 5 nm is necessary for quarter micron devices such as the 256 Mbit DRAM. Shortening the working distance (WD) is an effective way to improve the resolving power. However, conventional systems limit the WD since the specimen stage is separated from the magnetic circuits of the objective lens. In order to satisfy the requirements for the resolution, we have tested for a new E-beam wafer inspection system `in-lens SEM.' The `in-lens SEM' has a large objective lens that serves as a specimen chamber, and the specimen stage is built in the objective lens. As a result, the WD of `ultimate 0' can be realized. This is one of the most remarkable features of this system.

Citation Download Citation

Fumio Mizuno, Satoru Yamada, Akihiro Miura, Tadashi Ohtaka, and Nobuo Tsumaki "Ultrahigh resolution in-lens type wafer inspection system", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); https://doi.org/10.1117/12.174119

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