Combination of transmission and absorption mask for 0.3-um lithography

Lothar Bauch; Joachim J. Bauer; Monika Boettcher; Ulrich A. Jagdhold; Ulrich Haak; Walter Spiess

doi:10.1117/12.175409

17 May 1994 Combination of transmission and absorption mask for 0.3-um lithography

Lothar Bauch, Joachim J. Bauer, Monika Boettcher, Ulrich A. Jagdhold, Ulrich Haak, Walter Spiess

Proceedings Volume 2197, Optical/Laser Microlithography VII; (1994) https://doi.org/10.1117/12.175409
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

High resolution is achieved by a transmission mask. Distortions at the end of structures are eliminated by application of an absorption pattern (chrome). Structures of a line width larger than 0.8 micrometers are produced by the chrome part of the mask, smaller structures by the transmission level. The performance of this kind of mask is demonstrated by SEM micrographs.

Citation Download Citation

Lothar Bauch, Joachim J. Bauer, Monika Boettcher, Ulrich A. Jagdhold, Ulrich Haak, and Walter Spiess "Combination of transmission and absorption mask for 0.3-um lithography", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175409

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