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Structures obtained using high-energy ion implantation into silicon are the novel object for optical diagnostics'.
Implanted layers are characterized by significant spatial blur of optical transitions, contrary to the traditional sharp filmsubstrate
interfaces. When oxygen ions are implanted at 1 MeV into monociystalline silicon, the projected range equals to
R1.2 tm and the half width of depth profile of oxygen concentration is equal approximately to LR=O.2 m.2 Optical
properties of this structure may be significantly different depended on the wavelength ? of sounding light. An approximation
of sharp interface AR,<?Jn is true (here n is the refractive index of
silicon). Experimental result on light reflection from this structure in the visible and MR ranges can not be predicted
beforehand. On the other hand, it may be expected that the substantial gradient of refractive index is similar to sharp
reflecting interface, especially with increasing incidence angle. The basic problem for optical diagnostics of the implanted
structures is to determine the depth profile of refractive index. Such experimental determination is required for the synthesis
of planar optical waveguides using ion implantation. Some preliminary results relating to the formation of the physical
concept of interaction oflight with implanted structures are presented in this paper.
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