Preparation of SiO2 film by direct photo-CVD on strained SiGe layer

C. T. Lin; Yan-Kuin Su; Shoou-Jinn Chang; D. K. Nayak; Y. Shiraki

doi:10.1117/12.190739

26 October 1994 Preparation of SiO₂ film by direct photo-CVD on strained SiGe layer

C. T. Lin, Yan-Kuin Su, Shoou-Jinn Chang, D. K. Nayak, Y. Shiraki

Proceedings Volume 2364, Second International Conference on Thin Film Physics and Applications; (1994) https://doi.org/10.1117/12.190739
Event: Thin Film Physics and Applications: Second International Conference, 1994, Shanghai, China

Abstract

High quality SiO₂ layers were deposited on top of strained SiGe by direct photochemical vapor deposition with a deuterium lamp as the excitation source. It was found that the deposition rate increase linearly with the chamber pressure. Auger Electron spectroscopy profile shows that these is no Ge rejected and no Ge-rich layer formed after devices were fabricated. At room temperature, the leakage current is about 3 X 10^-9 A/cm² under a 2 X 10⁶ V/cm electric field. The breakdown field can reach over 16 MV/cm for these SiGe MOS diodes.

Citation Download Citation

C. T. Lin, Yan-Kuin Su, Shoou-Jinn Chang, D. K. Nayak, and Y. Shiraki "Preparation of SiO₂ film by direct photo-CVD on strained SiGe layer", Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); https://doi.org/10.1117/12.190739

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available