New absorption lines in SI-GaAs related to As vacancy

B. Surma; S. Strzelecka; Malgorzata Mozdzonek; M. Gladysz

doi:10.1117/12.224973

16 October 1995 New absorption lines in SI-GaAs related to As vacancy

B. Surma, S. Strzelecka, Malgorzata Mozdzonek, M. Gladysz

Proceedings Volume 2373, Solid State Crystals: Materials Science and Applications; (1995) https://doi.org/10.1117/12.224973
Event: Solid State Crystals: Materials Science and Applications, 1994, Zakopane, Poland

Abstract

Optical measurements of semi-insulating GaAs in spectral region 1400 - 500 cm^-1 are presented. The new absorption lines X5 (1201.8 cm^-1) and X4 (1317.5 cm^-1) are observed. It has been found that they are related to electrically active defects and are electronic transitions in nature. The coupling of the defect responsible for these lines with the lattice is stronger than CC model predicts. Our results seems to suggest that the lines are related to V_As defect.

Citation Download Citation

B. Surma, S. Strzelecka, Malgorzata Mozdzonek, and M. Gladysz "New absorption lines in SI-GaAs related to As vacancy", Proc. SPIE 2373, Solid State Crystals: Materials Science and Applications, (16 October 1995); https://doi.org/10.1117/12.224973

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