Paper
8 March 1995 High-power operation of low-confinement laser-diode structure
Iulian B. Petrescu-Prahova, Manuela Buda, Gheorghe Iordache, Fouad Karouta, Barry Smalbrugge, Theo G. van de Roer, L. M.F. Kaufmann, Joachim H. Wolter, Willem G. van der Vleuten
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Proceedings Volume 2461, ROMOPTO '94: Fourth Conference in Optics; (1995) https://doi.org/10.1117/12.203458
Event: ROMOPTO '94: 4th Conference on Optics, 1994, Bucharest, Romania
Abstract
Low confinement laser diode structure permits lower modal gain, longer devices and wider stripes. The optimum value of the confinement factor is correlated with the modal attenuation coefficient. For an 1 cm-1 modal attenuation coefficient, the optimum operation is obtained in 12 micrometers stripe and 0.007 confinement factor. In such structures, fundamental lateral mode is preserved at power higher than 1 W.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Iulian B. Petrescu-Prahova, Manuela Buda, Gheorghe Iordache, Fouad Karouta, Barry Smalbrugge, Theo G. van de Roer, L. M.F. Kaufmann, Joachim H. Wolter, and Willem G. van der Vleuten "High-power operation of low-confinement laser-diode structure", Proc. SPIE 2461, ROMOPTO '94: Fourth Conference in Optics, (8 March 1995); https://doi.org/10.1117/12.203458
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KEYWORDS
Refractive index

Signal attenuation

Quantum wells

Semiconductor lasers

High power lasers

Mirrors

Diffusion

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