Chemical and electrical analysis of CdS interlayers on InP and related materials

Helen M. Dauplaise; Kenneth Vaccaro; Andrew Davis; George O. Ramseyer; Stephen M. Spaziani; Joseph V. Beasock; Eric A. Martin; Joseph P. Lorenzo

doi:10.1117/12.212724

30 June 1995 Chemical and electrical analysis of CdS interlayers on InP and related materials

Helen M. Dauplaise, Kenneth Vaccaro, Andrew Davis, George O. Ramseyer, Stephen M. Spaziani, Joseph V. Beasock, Eric A. Martin, Joseph P. Lorenzo

Author Affiliations +

Proceedings Volume 2481, Photonic Device Engineering for Dual-Use Applications; (1995) https://doi.org/10.1117/12.212724
Event: SPIE's 1995 Symposium on OE/Aerospace Sensing and Dual Use Photonics, 1995, Orlando, FL, United States

Abstract

Cadmium sulfide (CdS) layers were deposited from aqueous solutions of thiourea, cadmium sulfate, and ammonia on (100) InP, InGaAs, and InAlAs. X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and atomic force microscopy (AFM) were used to investigate the structural and chemical nature of the deposited CdS layer and the CdS/semiconductor interface. XPS showed that the deposition process effectively removes existing native oxides on InP and InAlAs before CdS growth occurs. Capacitance-voltage measurements of metal-insulator- semiconductor (MIS) capacitors were used to investigate the interface- state density of samples with and without CdS films between InP and a deposited insulator. CdS interlayers were found to reduce both the hysteresis and the interface-state density of the MIS capacitors. Applications of CdS interlayers for various photonic devices will be discussed.

Citation Download Citation

Helen M. Dauplaise, Kenneth Vaccaro, Andrew Davis, George O. Ramseyer, Stephen M. Spaziani, Joseph V. Beasock, Eric A. Martin, and Joseph P. Lorenzo "Chemical and electrical analysis of CdS interlayers on InP and related materials", Proc. SPIE 2481, Photonic Device Engineering for Dual-Use Applications, (30 June 1995); https://doi.org/10.1117/12.212724

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