Pulsed-laser deposition of boron nitride films on silicon

R. Schmauder; G. Dodel; G. Bilger

doi:10.1117/12.203637

1 March 1995 Pulsed-laser deposition of boron nitride films on silicon

R. Schmauder, G. Dodel, G. Bilger

Proceedings Volume 2498, Laser Methods of Surface Treatment and Modification: ALT '94 International Conference; (1995) https://doi.org/10.1117/12.203637
Event: Laser Methods of Surface Treatment and Modification: ALT '94 International Conference, 1994, Konstanz, Germany

Abstract

Boron nitride (BN) films were deposited on (001) faces of silicon (Si) using pulsed excimer laser ablation at 308 nm and 248 nm. The films were analyzed by Fourier-transform-infrared (FTIR) transmission spectroscopy, x-ray photoelectron-spectroscopy (XPS) and by x-ray diffractometry (XRD). The films are boron rich and contain hexagonal BN (h-BN). They are x-ray amorphous. So far we found no evidence for the formation of cubic BN (c-BN) crystallites in the films.

Citation Download Citation

R. Schmauder, G. Dodel, and G. Bilger "Pulsed-laser deposition of boron nitride films on silicon", Proc. SPIE 2498, Laser Methods of Surface Treatment and Modification: ALT '94 International Conference, (1 March 1995); https://doi.org/10.1117/12.203637

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