Global space charge effects in ion-beam lithography

John J. Petillo; Alfred A. Mondelli

doi:10.1117/12.221618

25 September 1995 Global space charge effects in ion-beam lithography

John J. Petillo, Alfred A. Mondelli

Proceedings Volume 2522, Electron-Beam Sources and Charged-Particle Optics; (1995) https://doi.org/10.1117/12.221618
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

Ion Projection Lithography (IPL) is a candidate technology for meeting expected circuit design rules (less than 0.18 micrometers) for future generations of semiconductor devices. The Advanced Lithography Group (ALG), a consortium of industrial and US government laboratories and universities, is developing IPL technology with funding from ARPA and the state of Maryland. A prototype IPL device, the ALG-1000, is being developed to demonstrate the capability of IPL to meet future requirements for pattern overlay. To realize IPL technology requires control of space charge effects in the ion optical column. Due to the length of the IPL system (several meters), the precision of the calculation to predict distortion at the wafer plane becomes difficult to perform. Including the effects of space charge effects is even more difficult. Both global and stochastic space charge phenomena occur. This paper presents a system of computer models that allows simulations of both global and stochastic space charge effects. In particular, the models will be used on the ion beam projector in the ALG-1000 device. The calculations are carried out using a self-consistent equilibrium ray tracing code, where the applied fields are calculated from the actual lens column geometry. For global space-charge, the model also includes optimization of the lens electrode voltages to minimize pattern distortion at the wafer plane.

Citation Download Citation

John J. Petillo and Alfred A. Mondelli "Global space charge effects in ion-beam lithography", Proc. SPIE 2522, Electron-Beam Sources and Charged-Particle Optics, (25 September 1995); https://doi.org/10.1117/12.221618

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KEYWORDS

Ions

Photomasks

Distortion

Stochastic processes

Semiconducting wafers

Ion beams

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