Paper
3 November 1995 D-SCAN: an instrument for nondestructive monitoring of growth defects in GaAs wafers
Kestutis Jarasiunas, Juozas V. Vaitkus, E. Gaubas, J. Kapturauskas, R. Vasiliauskas
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226222
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
An instrument for nondestructive and contactless determination of growth-defect planar distribution across LEC grown GaAs wafers has been developed and assembled. It can be used for monitoring the defectiveness of the wafers as for evaluation of the effect of technological processes (as doping, annealing, irradiation, etc.) on homogeneity of wafer characteristics. The possibilities of the instrument and transient grating technique for metrology of semiconductor parameters are shown.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kestutis Jarasiunas, Juozas V. Vaitkus, E. Gaubas, J. Kapturauskas, and R. Vasiliauskas "D-SCAN: an instrument for nondestructive monitoring of growth defects in GaAs wafers", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226222
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KEYWORDS
Semiconducting wafers

Gallium arsenide

Diffraction

Nondestructive evaluation

Diffraction gratings

Pulsed laser operation

Semiconductors

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