Nonlinear and interferometric optical methods of diagnostics of semiconductors

Volodymyr S. Ovechko; Andrii M. Dmitruk

doi:10.1117/12.226173

3 November 1995 Nonlinear and interferometric optical methods of diagnostics of semiconductors

Volodymyr S. Ovechko, Andrii M. Dmitruk

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226173
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

The feasibility of the optical scheme of measurement of concentration of nonequilibrium charge carriers has been demonstrated. Relaxation of electrons and heating of sample have been taken into account dealing with theoretical description. Experimental research has been carried out with c-Si sample.

Citation Download Citation

Volodymyr S. Ovechko and Andrii M. Dmitruk "Nonlinear and interferometric optical methods of diagnostics of semiconductors", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226173

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