Paper
3 November 1995 Photoluminescent and infrared Fourier diagnostics of porous silicon exposed to HF destructive etching
Galina Yu. Rudko, Tamara Ya. Gorbach, Petr S. Smertenko, Sergey V. Svechnikov, Mikhail Ya. Valakh, Vladimir V. Bondarenko, Alexandr Dorofeev
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Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226185
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine
Abstract
Photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR) have been used to characterize porous silicon layers (PSL) exposed to HF destructive etching. The results obtained lend support to the view that chemical passivation, in particular by oxygen, is the major factor which controls the origin of PL. The PL intensity and the PL shift are ascribed to the changes in hydrogen and oxygen termination of pores.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Galina Yu. Rudko, Tamara Ya. Gorbach, Petr S. Smertenko, Sergey V. Svechnikov, Mikhail Ya. Valakh, Vladimir V. Bondarenko, and Alexandr Dorofeev "Photoluminescent and infrared Fourier diagnostics of porous silicon exposed to HF destructive etching", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226185
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KEYWORDS
Silicon

FT-IR spectroscopy

Etching

Luminescence

Oxygen

Diagnostics

HF etching

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