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The formation of contacts by means of indium, aluminum, tin and indium-tin-oxide (ITO) to n-type ZnSe layers grown by MBE has been investigated using x-ray-photoelectron- spectroscopy (XPS) and current-voltage (I-V) techniques. Quite different behavior was found for metal contacts compared to ITO. For the latter it is possible to form ohmic contacts for ZnSe doping levels in the range of n equals 2 multiplied by 1017 to 3.5 multiplied by 1018 cm-3 with specific contact resistances as low as Rc equals 9 multiplied by 10-3 (Omega) cm2. Whereas metal contacts behave according to thermionic emission theory with nonlinear I-V-curves depending on the doping level of ZnSe epilayers.
Karl Schuell,Wolfgang Spahn,V. Hock,U. Lunz,M. Ehinger,Wolfgang Faschinger, andGottfried Landwehr
"Investigation of electrical properties and thermal stability of ohmic contacts to n-ZnSe for planar contacts on blue-green laser diodes", Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238969
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Karl Schuell, Wolfgang Spahn, V. Hock, U. Lunz, M. Ehinger, Wolfgang Faschinger, Gottfried Landwehr, "Investigation of electrical properties and thermal stability of ohmic contacts to n-ZnSe for planar contacts on blue-green laser diodes," Proc. SPIE 2693, Physics and Simulation of Optoelectronic Devices IV, (1 May 1996); https://doi.org/10.1117/12.238969