MOSAD IR focal plane per pixel A/D development

William J. Mandl; James J. Kennedy; Muren Chu

doi:10.1117/12.243527

26 June 1996 MOSAD IR focal plane per pixel A/D development

William J. Mandl, James J. Kennedy, Muren Chu

Author Affiliations +

Proceedings Volume 2745, Infrared Readout Electronics III; (1996) https://doi.org/10.1117/12.243527
Event: Aerospace/Defense Sensing and Controls, 1996, Orlando, FL, United States

Abstract

An on focal plane digital readout development suggested by the Army Night Vision & Electronics Sensors Directorate is proceeding under a combined program with the development of two color HCT detector arrays. The on focal plane A/D process is based on the Amain patented multiplexed oversample A/D, MOSAD, technology. In the first year of the program, prototype on focal plane analog to digital converters for both staring arrays and scanning arrays were built and demonstrated. The prototypes included a 2 loop double ended switched MOSAD and a 1 loop single ended MOSAD. Results from the original experimental prototypes showed conclusively that better than 14 bits could be achieved and that well capacity could be increased to support high background HCT needs approaching 10⁹ electrons. In the second year, a 64 X 64 staring array for HCT LWIR detectors, 50 micron centers, was built based on these original prototype designs. The layout of the per pixel MOSAD A/D staring array used Orbit 1.2 micron CMOS process and achieved a pixel size of 40 microns with a well capacity of 1.9 X 10⁸ electrons. Integration capacitors were built using Orbit's normal double poly capacitors with a standard buffered direct inject TIA detector interface configuration. Preliminary testing has been completed indicating complete functionality. Fermionics LWIR HCT detectors with cutoff at 9 microns have been built for attachment to the readout but indium bumping was not completed in time to report system level testing results. However, some noise tests have been performed using on array current mirrors. These tests indicate that better than 12 bits has been achieved, but lower noise current sources will be required for a more accurate measurement.

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William J. Mandl, James J. Kennedy, and Muren Chu "MOSAD IR focal plane per pixel A/D development", Proc. SPIE 2745, Infrared Readout Electronics III, (26 June 1996); https://doi.org/10.1117/12.243527

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