Paper
19 August 1996 Novel low-temperature Er3+ doping of lithium niobate
Jarmila Spirkova-Hradilova, Pavla Kolarova, Josef Schroefel, Jiri Ctyroky, Jiri Vacik, Vratislav Perina
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Abstract
Low temperature doping procedure is employed to make erbium doped lithium niobate substrates. The doping process is studied for X-, Y- and Z-cuts in both virgin and proton exchanged wafers. The amount as high as 9 weight percent of erbium was found in X-cuts when the doping was performed from a mixture of molten nitrates containing 10 weight percent of erbium slat after 5 hours diffusion at 400 degrees C. The content of erbium in Z- and Y-cuts as well as in the proton exchanged X-cuts was found to be much lower, below 0.5 percent. In-diffused erbium ions concentration is localized in a very thin layer, which can be extended by a subsequent annealing. Annealed proton exchanged waveguides were fabricated in the erbium doped wafers without any deterioration of the samples surfaces.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jarmila Spirkova-Hradilova, Pavla Kolarova, Josef Schroefel, Jiri Ctyroky, Jiri Vacik, and Vratislav Perina "Novel low-temperature Er3+ doping of lithium niobate", Proc. SPIE 2775, Specification, Production, and Testing of Optical Components and Systems, (19 August 1996); https://doi.org/10.1117/12.246802
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Cited by 10 scholarly publications.
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KEYWORDS
Erbium

Ions

Waveguides

Doping

Lithium niobate

Lithium

Diffusion

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