Jarmila Spirkova-Hradilova,1 Pavla Kolarova,1 Josef Schroefel,2 Jiri Ctyroky,3 Jiri Vacik,4 Vratislav Perina4
1Institute of Chemical Technology (Czech Republic) 2Czech Technical Univ. (Czech Republic) 3Institute of Radio Engineering and Electronics (Czech Republic) 4Institute of Nuclear Physics (Czech Republic)
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Low temperature doping procedure is employed to make erbium doped lithium niobate substrates. The doping process is studied for X-, Y- and Z-cuts in both virgin and proton exchanged wafers. The amount as high as 9 weight percent of erbium was found in X-cuts when the doping was performed from a mixture of molten nitrates containing 10 weight percent of erbium slat after 5 hours diffusion at 400 degrees C. The content of erbium in Z- and Y-cuts as well as in the proton exchanged X-cuts was found to be much lower, below 0.5 percent. In-diffused erbium ions concentration is localized in a very thin layer, which can be extended by a subsequent annealing. Annealed proton exchanged waveguides were fabricated in the erbium doped wafers without any deterioration of the samples surfaces.
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Jarmila Spirkova-Hradilova, Pavla Kolarova, Josef Schroefel, Jiri Ctyroky, Jiri Vacik, Vratislav Perina, "Novel low-temperature Er3+ doping of lithium niobate," Proc. SPIE 2775, Specification, Production, and Testing of Optical Components and Systems, (19 August 1996); https://doi.org/10.1117/12.246802