Paper
22 October 1996 Advances in vapor phase epitaxy of HgCdTe on sapphire and silicon
Sergio Bernardi
Author Affiliations +
Abstract
The 'isothermal vapor phase epitaxy (iso-VPE) of mercury cadmium telluride on finite cadmium telluride substrate- systems,' consists in the complete transformation of starting CdTe films, on foreign-inert-substrates grown (by MOCVD or MBE), into compositionally controlled and uniform HgCdTe/foreign-substrate structures. The HgTe vapor phase growth and the HgTe/CdTe solid-state interdiffusion are the physical phenomena controlling the iso-VPE process evolution. Working at 530 degrees Celsius, under experimental conditions characterized by HgTe/CdTe interdiffusion rates higher than the HgTe growth rates, the possibility to prepare high quality Hg1-xCdxTe/Sapphire structures has been demonstrated and reported last year. Recently the same process has been successfully experimented on CdTe/Silicon substrates too. For the first time the HgCdTe/Silicon iso-VPE structures characteristics are reported in comparison with the equivalent HgCdTe/Sapphire films. Because of the good solid-state chemical compatibility between Hg1-xCdxTe alloys and silicon, well defined metallurgic interfaces between active layers and silicon substrates have been obtained. Rocking curves with FWHM in the 110 - 130 arcsec range have been measured on 15 micrometer thick HgCdTe/silicon iso-VPE structures. The films as-grown electrical characteristics are p-type, according to a mercury vacancy dominated defectivity.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergio Bernardi "Advances in vapor phase epitaxy of HgCdTe on sapphire and silicon", Proc. SPIE 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, (22 October 1996); https://doi.org/10.1117/12.255154
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Cited by 3 scholarly publications.
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KEYWORDS
Silicon

Mercury cadmium telluride

Patterned sapphire substrate

Mercury

Sapphire

Silicon films

Metalorganic chemical vapor deposition

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