Paper
4 November 1996 Application of off-specular x-ray reflectivity for surface characterization
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Abstract
A scheme based on the distorted wave Born approximation has been developed to model the off-specular x-ray reflectivity from flat surfaces with compositional and topographic fluctuations. To verify this theoretical work, silicon wafers coated with evenly spaced aluminum lines were chosen as the test samples. Good agreement is found between the calculationed and the experimental results. In addition, a gross difference in the off-specular spectra was observed from two test samples different only in their surface roughness; this observation demonstrates the potential of using off-specular x-ray reflectivity for quality control measurements.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wen-li Wu "Application of off-specular x-ray reflectivity for surface characterization", Proc. SPIE 2862, Flatness, Roughness, and Discrete Defect Characterization for Computer Disks, Wafers, and Flat Panel Displays, (4 November 1996); https://doi.org/10.1117/12.256208
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Cited by 1 scholarly publication.
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KEYWORDS
Reflectivity

X-rays

Aluminum

Silicon

Interfaces

Semiconducting wafers

X-ray characterization

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