Paper
13 September 1996 Semiconductor surface superlattice symmetry type evaluation
Yuri Kornienko, Alexander P. Fedtchouk, Ruslana A. Rudenko
Author Affiliations +
Abstract
We have constructed the automated complex oriented to the semiconductor wafer surface superlattice symmetry type evaluation. The basis of the method is the photo-e.m.f. signal registration as a function of the rotation angle of the upper transparent electrode. The main part of the apparatus is the molecular dipole probe being characterized by the value of the surface monolayer charge which in turn depends on the wafer surface micro curvature (atomic rows energetic relief). As the result of the present work the interdependence between the number of light director orientation axes and surface atoms coordination type which is, at the same time, the symmetry of the superlattice.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri Kornienko, Alexander P. Fedtchouk, and Ruslana A. Rudenko "Semiconductor surface superlattice symmetry type evaluation", Proc. SPIE 2877, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III, (13 September 1996); https://doi.org/10.1117/12.250940
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Superlattices

Semiconductors

Semiconducting wafers

Chemical species

Electrodes

Liquid crystals

Silicon

Back to Top