0.808-um InGaAsP/GaAs SCH lasers

Baoren Zhu; Xingde Zhang; Baoxue Bo; Baoshun Zhang; Zonghe Yang

doi:10.1117/12.251922

24 September 1996 0.808-μm InGaAsP/GaAs SCH lasers

Baoren Zhu, Xingde Zhang, Baoxue Bo, Baoshun Zhang, Zonghe Yang

Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251922
Event: Photonics China '96, 1996, Beijing, China

Abstract

This paper presents new results obtained recently in studies of separate confinement structure InGaAsP/lasers. Using Russia's technology, the InGaAsP/GaAs lasers based on QW structure can be produced y a short-time liquid phase epitaxy employing a modified sliding boat technique. The interface abruptness in the InGaAsP/GaAs lasers can be made comparable to the lattice constant. Using 100 GaAs substrates, InGaAsP/GaAs SCH SQW lasers were fabricated and the following values of the main parameters were obtained: lasing wavelength (lambda) equals 808 micrometers , threshold current density J_th equals 100A/cm², and power conversion efficiency N $eq 56 percent at a CW power of 1W for a laser with a stripe width W equals 100micrometers .

Citation Download Citation

Baoren Zhu, Xingde Zhang, Baoxue Bo, Baoshun Zhang, and Zonghe Yang "0.808-μm InGaAsP/GaAs SCH lasers", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251922

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