1.48-um InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers

Haiyan An; Shuren Yang; Hong-Bo Sun; Yuheng Peng; Shiyong Liu

doi:10.1117/12.251916

24 September 1996 1.48-μm InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers

Haiyan An, Shuren Yang, Hong-Bo Sun, Yuheng Peng, Shiyong Liu

Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251916
Event: Photonics China '96, 1996, Beijing, China

Abstract

In this report, InGaAs/InGaAsP separated confinement strained-layer multiple-quantum-well laser structures for 1.48micrometers emission wavelength have been grown by LP-MOVPE. The lasing characteristics of the dependence of threshold current densities on the inverse of cavity length and the dependence of threshold current on the cavity length have been studied with room temperature pulse operated broad-area lasers. To reduce the threshold current, the room temperature CW H⁺ ion implantation stripe lasers with varies widths have been fabricated. The stripe width dependence of threshold current for a set of these devices have also been investigated. Besides, to obtain a high output power from the front facet, we have studied the design of the facet reflective.

Citation Download Citation

Haiyan An, Shuren Yang, Hong-Bo Sun, Yuheng Peng, and Shiyong Liu "1.48-μm InGaAs/InGaAsP separated confinement strained layer multiple quantum well lasers", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251916

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