Paper
4 April 1997 Resonant cavity LEDs by lateral epitaxy
Michael G. Mauk, P. A. Burch, Scott W. Johnson, Zane A. Shellenbarger, James Braden McNeely, Thomas A. Goodwin, Bryan W. Feyock
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Abstract
Optical cavity light-emitting diode structures with 'buried' mirrors, and their fabrication by lateral epitaxy are described. Single-crystal, high-quality epitaxial layers are formed over substrates coated with patterned, reflective masks using liquid-phase or vapor-phase epitaxial lateral overgrowth processes. The reflecting mask acts as a backside mirror and forms an optical cavity leading to enhanced external quantum efficiencies. An AlGaAs optical cavity LED incorporating a refractory metal 'buried' mirror is assessed: a greater than 3-fold increase in output optical power is measured compared to control devices with no buried mirror. Application of the epitaxial overgrowth techniques to LED structures utilizing electron-beam deposited dielectric/semiconductor 'buried' mirrors and to other semiconductor materials, such as InGaAsSb, SiC, and ZnSe is described.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael G. Mauk, P. A. Burch, Scott W. Johnson, Zane A. Shellenbarger, James Braden McNeely, Thomas A. Goodwin, and Bryan W. Feyock "Resonant cavity LEDs by lateral epitaxy", Proc. SPIE 3002, Light-Emitting Diodes: Research, Manufacturing, and Applications, (4 April 1997); https://doi.org/10.1117/12.271051
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KEYWORDS
Mirrors

Light emitting diodes

Reflectivity

Reflectors

Photomasks

Semiconductors

Epitaxial lateral overgrowth

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