Electrical study of crystalline silicon coimplanted with erbium and oxygen

Sang H. Ahn; Jorg Palm; Bo Zheng; Xiaoman Duan; Anuradha Agarwal; Shelby F. Nelson; Jurgen Michel; Lionel C. Kimerling

doi:10.1117/12.273848

25 April 1997 Electrical study of crystalline silicon coimplanted with erbium and oxygen

Sang H. Ahn, Jorg Palm, Bo Zheng, Xiaoman Duan, Anuradha Agarwal, Shelby F. Nelson, Jurgen Michel, Lionel C. Kimerling

Proceedings Volume 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices; (1997) https://doi.org/10.1117/12.273848
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

The sharp luminescence at a wavelength 1.54 micrometers from the 4 f shell of the Er³⁺ ion in the Si:Er system makes it an excellent candidate for a silicon-based optoelectronic source. To design efficient optoelectronic emitters, it is crucial to understand the excitation and relaxation processes of Si:Er³⁺. Cz silicon substrates were co- implanted with Er and O at Er beam energies of 320 keV, 400 keV and 4.5 MeV. The implanted substrates were subsequently annealed at temperatures between 600 degree(s)C and 1000 degree(s)C for 30 minutes. Spreading resistance profile and capacitance-voltage measurements show that Er and O implantation into Si generates donors. The donor concentration decreases as annealing temperature increases from 800 degree(s)C to 1000 degree(s)C, and the donor profile moves toward the surface due to oxygen outdiffusion. The number of donors shows a linear correspondence with the luminescence intensity. Hall effect and temperature dependent capacitance measurements reveal the presence of energy levels at 40 meV and 160 meV below the conduction band edge. These observations suggest that the donors are likely to be [Si:ErO_x]^0/+ complexes and that they provide the gateway to Si:Er³⁺ excitation. The Si:Er photoluminescence intensity (PL) decreases with increasing temperature in two distinct regimes: the PL intensity is weakly dependent on temperature from 4 K to 100 K and, it shows an activation energy of 160 meV above 100 K. We demonstrate that the first regime is governed by the impurity Auger effect and the second regime is dominated by a phonon-mediated back transfer mechanism through charge transfer at [Si:ErO_x]^0/+ related traps in the silicon bandgap.

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Sang H. Ahn, Jorg Palm, Bo Zheng, Xiaoman Duan, Anuradha Agarwal, Shelby F. Nelson, Jurgen Michel, and Lionel C. Kimerling "Electrical study of crystalline silicon coimplanted with erbium and oxygen", Proc. SPIE 3007, Silicon-Based Monolithic and Hybrid Optoelectronic Devices, (25 April 1997); https://doi.org/10.1117/12.273848

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