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Laser induced chemical vapor deposition (LCVD) of silicon nitride and silicon dioxide single and double layers have been investigated using excimer laser operating at a wavelength of 193 nm. The composition of silicon nitride which was formed in SiH4/NH3 gas mixture was nearly stochiometric having a refractive index of 1.8 - 1.9 and contained small amount of hydrogen. Deposition of silicon dioxide was investigated using SiH4/N2O. Using this gas mixture the film composition depended strongly upon the SiH4/N2O ratio. At high ratio the film formed was silicon oxynitride, which contained both Si-N and Si-O bonds. The film also contained small amount of Si-H bonds. Decreasing SiH4/N2O ratio led to the formalin of pure silicon dioxide with a refractive index of 1.45. A double layer coating of both silicon nitride and silicon dioxide resulted in the formation of antireflection coating with a reflectivity of about 0.5% at 750 nm.
Shoshana Tamir,S. Berger,Kopel Rabinovitch,Mordechai Gilo, andReuben Dahan
"Laser-induced chemical vapor deposition of optical thin films on curved surfaces", Proc. SPIE 3110, 10th Meeting on Optical Engineering in Israel, (22 September 1997); https://doi.org/10.1117/12.281399
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Shoshana Tamir, S. Berger, Kopel Rabinovitch, Mordechai Gilo, Reuben Dahan, "Laser-induced chemical vapor deposition of optical thin films on curved surfaces," Proc. SPIE 3110, 10th Meeting on Optical Engineering in Israel, (22 September 1997); https://doi.org/10.1117/12.281399