Relationship between resistivity and temperature for Hg1-xCdxTe photoconductive detectors

Yongsheng Gui; Guozhen Zheng; X. C. Zhang; Shaoling Guo; Junhao Chu; Yi Cai

doi:10.1117/12.300710

20 February 1998 Relationship between resistivity and temperature for Hg1-xCdxTe photoconductive detectors

Yongsheng Gui, Guozhen Zheng, X. C. Zhang, Shaoling Guo, Junhao Chu, Yi Cai

Author Affiliations +

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300710
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

Two kinds of two dimensional electrons in same surface have been found in Hg_1-xCd_xTe (x equals 0.214) photoconductive detectors from studies of the shubnikov-de Haas (SdH) oscillation. It has been found that the number of electrons in each kind is about constant from 1.5 K to 55 K by SdH measurements. A model considered two kinds of surface electrons is proposed to fit the temperature dependence of the resistivity. The electrical parameters obtained by this model agree well with the experiment and the results given by SdH measurements. This paper offers a simple and effective model to investigate the bulk and surface electrical properties for a two-terminal device.

Citation Download Citation

Yongsheng Gui, Guozhen Zheng, X. C. Zhang, Shaoling Guo, Junhao Chu, and Yi Cai "Relationship between resistivity and temperature for Hg1-xCdxTe photoconductive detectors", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300710

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