Diamond film improvement on WC-Co substrate by sputtering interface

Xianchang He; Hesheng Shen; Zhiming Zhang; Shenghua Li

doi:10.1117/12.300665

20 February 1998 Diamond film improvement on WC-Co substrate by sputtering interface

Xianchang He, Hesheng Shen, Zhiming Zhang, Shenghua Li

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300665
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

To enhance the adhesion of diamond film on WC-Co substrate, interface of TiC and SiC by sputtering technique were introduced between them. The film structure and surface morphology have been checked by x-ray diffraction, Raman spectroscopy and SEM. The adhesion between both coating and substrate have been evaluated by cutting test. In addition, the vertical tensile test has been carried out to measure the adhesion strength, which indicated that the introduce of the interface layer played important effect for improvement of the film adhesion strength.

Citation Download Citation

Xianchang He, Hesheng Shen, Zhiming Zhang, and Shenghua Li "Diamond film improvement on WC-Co substrate by sputtering interface", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300665

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