PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Characteristic features of the photoelectric amplification of graded-band-gap photoresistors which energy gap is increased linearly towards contacts are considered theoretically. It has been shown that nonmonotonic field dependence of the photoelectric amplification coefficient is realized in such photoresistors. Maximum value the photoelectric amplification coefficient being increased under the increase of energy gap gradient can be much greater than that of the homogeneous samples.
Volodymyr G. Savitsky,Bogdan S. Sokolovsky, andAlexey V. Nemolovsky
"Calculations of photoelectric amplification coefficient in graded-band-gap photoresistors", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280448
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Volodymyr G. Savitsky, Bogdan S. Sokolovsky, Alexey V. Nemolovsky, "Calculations of photoelectric amplification coefficient in graded-band-gap photoresistors," Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280448