Paper
5 June 1998 Synchrotron radiation process and in-situ observation technique: infrared reflection absorption spectroscopy
Tsuneo Urisu
Author Affiliations +
Abstract
Synchrotron radiation (SR) stimulated etching shows unique material selectivities. SR decomposition of silicon hydrides on Si(100) surface measured by IR reflection absorption spectroscopy also shows unique reaction selectivities; SiH2 and SiH3 are decomposed but SiH is not. These material selectivities are qualitatively explained by the quenching of the excited electronic states. The material selectivity, reaction selectivity by the excitation energy tuning to the specific core electron excitations, and extremely high spatial resolutions owing to the short wavelength nature, SR stimulated etching is a potentially powerful technique for the nanometric processes.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tsuneo Urisu "Synchrotron radiation process and in-situ observation technique: infrared reflection absorption spectroscopy", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309588
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Etching

Infrared spectroscopy

Reflection

Infrared radiation

Silicon

Absorption spectroscopy

Synchrotron radiation

Back to Top