High-silicon-concentration TSI process for 193-nm lithography

Shigeyasu Mori; Taku Morisawa; Nobuyuki N. Matsuzawa; Yuko Kaimoto; Masayuki Endo; Takahiro Matsuo; Koichi Kuhara; Takeshi Ohfuji; Masaru Sasago

doi:10.1117/12.312359

29 June 1998 High-silicon-concentration TSI process for 193-nm lithography

Shigeyasu Mori, Taku Morisawa, Nobuyuki N. Matsuzawa, Yuko Kaimoto, Masayuki Endo, Takahiro Matsuo, Koichi Kuhara, Takeshi Ohfuji, Masaru Sasago

Author Affiliations +

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312359
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

A high-silicon-concentration top surface imaging (TSI) process for 193-nm lithography has been developed using vapor phase silylation, using dimethylaminopentamethyldisiloxane as a silylation agent and polydihydroxystyrene as a resist material. The etching rate of silylated resist can be explained by the relationship between the silicon content, the decomposition temperature, and the density. The pattern profile of the new TSI process can resolve 0.14 micrometers L/S. Although silylated layer flow occurs in a process below the glass transition temperature, the flow problem can be resolved by using a chemically amplified resist.

Citation Download Citation

Shigeyasu Mori, Taku Morisawa, Nobuyuki N. Matsuzawa, Yuko Kaimoto, Masayuki Endo, Takahiro Matsuo, Koichi Kuhara, Takeshi Ohfuji, and Masaru Sasago "High-silicon-concentration TSI process for 193-nm lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312359

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