Lithographic performance of recent DUV photoresists

Bob Streefkerk; Koen van Ingen Schenau; Corine Buijk

doi:10.1117/12.312369

29 June 1998 Lithographic performance of recent DUV photoresists

Bob Streefkerk, Koen van Ingen Schenau, Corine Buijk

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312369
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Commercially available photoresists from the major photoresist vendors are investigated using a PAS 5500/300 wafer stepper, a 31.1 mm diameter field size high throughput wafer stepper with variable NA capability up to 0.63. The critical dimension (CD) investigated is 0.25 micrometers and lower for dense and isolated lines and 0.25 micrometers for dense contact holes. The photoresist process performance is quantified by measuring exposure-defocus windows for a specific resolution using a CD SEM. Photoresists that are comparable with or better than APEX-E with RTC top coat, which is the current base line process for lines and spaces imaging performance, are Clariant AZ-DX1300 and Shin Etsu SEPR-4103PB50. Most recent photoresists have much improved delay performance when compared to APEX without top coat. Improvement, when an organic BARC is applied, depends on the actual photoresist characteristics. The optimal photoresist found for 0.25 micrometers contact holes is TOK DP015 C. This process operates at optimal conditions.

Citation Download Citation

Bob Streefkerk, Koen van Ingen Schenau, and Corine Buijk "Lithographic performance of recent DUV photoresists", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312369

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