Paper
29 June 1998 New antireflective coatings for 193-nm lithography
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Abstract
New bottom antireflective coatings (BARCs) for 193 nm lithography have been recently developed by Brewer Science Inc. Copolymers of benzyl methacrylate (or benzyl acrylate) and hydroxypropyl methacrylate have been synthesized and used as a main component in 193 nm BARCs. The acrylic copolymers have strong absorbance at 193 nm UV light wavelength. The 193 nm BARCs were formulated in safe solvents such as ethyl lactate and formed by spin-on coating process. Thermosetting of the 193 nm BARCs limited their intermixing with photoresists. These 193 nm BARCs had optical density of about 10 micrometers -1, k equals 0.35, and n equals 1.81. Preliminary oxygen plasma etch rates were > 1.5 times DUV resists. Good profiles at small feature sizes (< 0.20 micrometers ) were achieved with tested photoresists.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gu Xu, Douglas J. Guerrero, and Norman Dobson "New antireflective coatings for 193-nm lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312401
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CITATIONS
Cited by 2 scholarly publications and 2 patents.
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KEYWORDS
Photoresist materials

Polymers

Lithography

Absorbance

Ultraviolet radiation

Etching

Antireflective coatings

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