Paper
29 June 1998 Novel negative photoresist based on polar alicyclic polymers for ArF excimer laser lithography
Shigeyuki Iwasa, Kaichiro Nakano, Katsumi Maeda, Etsuo Hasegawa
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Abstract
A new polar alicyclic polymer has been developed as an ArF negative resist polymer. Poly(carboxytetracyclo[4.4.0.12,517,10] dodecyl acrylate-hydroxytricyclo[5.2.1.02,6]decyl acrylate (polyCTCDDAm-TCDAOHn)) has carboxyl and hydroxyl groups. It was founded that reactivity of the hydroxyl group was much higher than that of the carboxyl group in the acid- catalyzed crosslinking reaction. Poly(CTCDDA32-TCDAOH68) exhibits good solubility (0.5 micrometers /sec) in the standard developer (2.38% TMAH aq.), high transparency (70%/0.5 micrometers ) at 193-nm and high thermal stability (decomposition point: 230 degree(s)C). A chemically amplified negative resist composed of this polymer and 1,3,4,6- tetrakis(methoxymethyl)glicoluril (TMGU) provided a resolution of 0.18-micrometers L/S pattern with an ArF exposure system (NA equals 0.55) at a 9.2 mJ/cm2 dose.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shigeyuki Iwasa, Kaichiro Nakano, Katsumi Maeda, and Etsuo Hasegawa "Novel negative photoresist based on polar alicyclic polymers for ArF excimer laser lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312460
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CITATIONS
Cited by 7 scholarly publications and 16 patents.
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KEYWORDS
Polymers

Lithography

Transparency

Standards development

Excimer lasers

Transmittance

Absorption

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