Polymer design in surface modification resist process for ArF lithography

Takahiro Matsuo; Masayuki Endo; Shigeyasu Mori; Koichi Kuhara; Masaru Sasago; Masamitsu Shirai; Masahiro Tsunooka

doi:10.1117/12.312340

29 June 1998 Polymer design in surface modification resist process for ArF lithography

Takahiro Matsuo, Masayuki Endo, Shigeyasu Mori, Koichi Kuhara, Masaru Sasago, Masamitsu Shirai, Masahiro Tsunooka

Proceedings Volume 3333, Advances in Resist Technology and Processing XV; (1998) https://doi.org/10.1117/12.312340
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The surface modification resist process, which gives negative-tone image owing to the polysiloxane formation on the expected resist surface using a chemical vapor deposition, was studied for ArF lithography. We have designed the resist polymer for improving the resolution, the pattern profile and the sensitivity. We developed the polymer having a photoacid generating unit and a polarity change unit for improving the resolution. Though there was a problem of the pattern degradation by heating in the dry development using a TCP etcher, 0.13 micrometers pattern was achieved with steep wall profile by introducing the thermally stable alicyclic unit to this polymer system. Moreover, we investigated the polymer having a photoacid generating unit and a hydrophilic unit for improving sensitivity. It was found that the introduction of an adequate amount of the hydrophilic unit was effective for improving the sensitivity.

Citation Download Citation

Takahiro Matsuo, Masayuki Endo, Shigeyasu Mori, Koichi Kuhara, Masaru Sasago, Masamitsu Shirai, and Masahiro Tsunooka "Polymer design in surface modification resist process for ArF lithography", Proc. SPIE 3333, Advances in Resist Technology and Processing XV, (29 June 1998); https://doi.org/10.1117/12.312340

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